Low-Temperature MoS₂ Film Formation Using Sputtering and H₂S Annealing

Abstract

Low-carrier density and high-crystallinity molybdenum disulfide (MoS2) films were fabricated by low-temperature and clean process based on a UHV RF sputtering system. This paper focuses on improving crystallinity and reducing the number of sulfur defects of sputtered-MoS2 film. We have fabricated MoS2 films at lower than 400°C using the sputtering and H2S post-deposition annealing processes. Consequently, MoS2 films with high crystallinity and appropriate S/Mo ratio were obtained. Eventually, a low carrier density of 3.5 × 1017 cm-3 and the Hall-effect mobility of 12 cm2 V-1 s-1 were achieved.

Keywords

• Transition metal di-chalcogenide
• TMDC
• molybdenum disulfide (MoS₂)
• UHV RF sputtering
• H₂S annealing