High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications

Abstract

This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small- and large-signal measurements were performed, including the study of the influence of temperature and DC bias voltage. The purpose of this paper is to provide an overview, and a more in-depth analysis of DP substrate, of the characteristics of these multiple substrates to facilitate design choices for RF-IC applications.

Keywords

• Silicon-on-Insulator (SOI) technology
• effective resistivity
• trap-rich (TR) substrate
• Parasitic Surface Conduction (PSC)
• RF characterization
• RF substrate