Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)

Wanjun Chen; Hong Tao; Lunfei Lou; Chao Liu; Wu Cheng; Xuefeng Tang; Hongquan Liu; Qi Zhou; Xiaochuan Deng; Zhaoji Li; Bo Zhang

doi:10.1109/JEDS.2017.2701791

IEEE Journal of the Electron Devices Society (Jan 2017)

Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)

Wanjun Chen,
Hong Tao,
Lunfei Lou,
Chao Liu,
Wu Cheng,
Xuefeng Tang,
Hongquan Liu,
Qi Zhou,
Xiaochuan Deng,
Zhaoji Li,
Bo Zhang

Affiliations

Wanjun Chen: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Hong Tao: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Lunfei Lou: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Chao Liu: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Wu Cheng: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Xuefeng Tang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Hongquan Liu: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Qi Zhou: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Xiaochuan Deng: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Zhaoji Li: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Bo Zhang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

DOI: https://doi.org/10.1109/JEDS.2017.2701791
Journal volume & issue: Vol. 5, no. 4
pp. 275 – 282

Abstract

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A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region. The mechanism of the EI-IGBT is that electrons are injected in both OFF- and ON-state, thus accelerated electron-hole recombination is achieved, resulting in a fast turn-off process. Meanwhile, a low forward voltage drop is obtained due to an enhanced conductivity modulation. The simulation results show that, compared with the conventional IGBT, the proposed EI-IGBT delivers a comparable breakdown voltage while featuring an 80% shorter turn-off time (or a 72% lower turn-off loss) or a 23% lower forward voltage drop, resulting in a reduction of total energy loss.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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