Compact Charge Modeling of Double-Gate MOSFETs Considering the Density-Gradient Equation

Abstract

A compact charge model for double-gate metal-oxide-semiconductor field-effect transistors with the quantum confinement effect is presented. In addition to the Poisson equation, the density-gradient equation with a realistic boundary condition is considered to include the quantum confinement effect. The coupled governing equations are rigorously integrated. Contribution of the density-gradient equation is clearly identified. Based on the resultant integrated equation, a compact charge model is proposed. Expressions for model parameters are found. Numerical examples for various double-gate MOS structures are shown.

Keywords

• Compact model
• density-gradient equation
• double-gate MOSFETs
• quantum confinement effect
• semiconductor device modeling