2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications

Binjian Zeng; Min Liao; Qiangxiang Peng; Wenwu Xiao; Jiajia Liao; Shuaizhi Zheng; Yichun Zhou

doi:10.1109/JEDS.2019.2913426

IEEE Journal of the Electron Devices Society (Jan 2019)

2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications

Binjian Zeng,
Min Liao,
Qiangxiang Peng,
Wenwu Xiao,
Jiajia Liao,
Shuaizhi Zheng,
Yichun Zhou

Affiliations

Binjian Zeng: ORCiD; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, China
Min Liao: ORCiD; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, China
Qiangxiang Peng: ORCiD; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, China
Wenwu Xiao: ORCiD; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, China
Jiajia Liao: ORCiD; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, China
Shuaizhi Zheng: ORCiD; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, China
Yichun Zhou: Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, China

DOI: https://doi.org/10.1109/JEDS.2019.2913426
Journal volume & issue: Vol. 7
pp. 551 – 556

Abstract

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The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf0.5Zr0.5O2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization states of HZO ferroelectric thin film, which enables memories for multi-bit data storage. And then, 2-bit/cell operation of HZO-based FeFET is demonstrated utilizing two NAND architecture compatible write schemes of varying program pulse amplitude and width. Low cycle-to-cycle variability, long retention to extrapolation of 10 years at 85°C, and endurance of 500 cycles are achieved for the both schemes. Moreover, the mechanism for multilevel memory operations of the FeFET is illustrated based on the polarization switching dynamics of HZO ferroelectric thin film.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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