The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

Ya-Hsiang Tai; Han-Wen Liu; Po-Chun Chan

doi:10.1109/JEDS.2018.2875930

IEEE Journal of the Electron Devices Society (Jan 2019)

The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

Ya-Hsiang Tai,
Han-Wen Liu,
Po-Chun Chan

Affiliations

Ya-Hsiang Tai: Department of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, Taiwan
Han-Wen Liu: Department of Electrical Engineering, Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung, Taiwan
Po-Chun Chan: ORCiD; Department of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, Taiwan

DOI: https://doi.org/10.1109/JEDS.2018.2875930
Journal volume & issue: Vol. 7
pp. 33 – 37

Abstract

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In this paper, the reaction rate of oxygen vacancy (VO) by the derivatives of threshold voltage (Vth) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental results, a comprehensive model named VO pool is proposed. The proposed model can more universally describe the characteristic of VO reacting to the light and its degradation behavior under various kinds of stress condition.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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