High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

Yuangang Wang; Yuanjie Lv; Xingye Zhou; Jiayun Yin; Tingting Han; Guodong Gu; Xubo Song; Xin Tan; Shaobo Dun; Hongyu Guo; Yulong Fang; Zhihong Feng; Shujun Cai

doi:10.1109/JEDS.2017.2778087

IEEE Journal of the Electron Devices Society (Jan 2018)

High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

Yuangang Wang,
Yuanjie Lv,
Xingye Zhou,
Jiayun Yin,
Tingting Han,
Guodong Gu,
Xubo Song,
Xin Tan,
Shaobo Dun,
Hongyu Guo,
Yulong Fang,
Zhihong Feng,
Shujun Cai

Affiliations

Yuangang Wang: ORCiD; National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Yuanjie Lv: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Xingye Zhou: ORCiD; National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Jiayun Yin: ORCiD; National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Tingting Han: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Guodong Gu: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Xubo Song: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Xin Tan: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Shaobo Dun: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Hongyu Guo: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Yulong Fang: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Zhihong Feng: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Shujun Cai: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China

DOI: https://doi.org/10.1109/JEDS.2017.2778087
Journal volume & issue: Vol. 6
pp. 106 – 109

Abstract

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In this paper, we report on a novel E-mode AlGaN/GaN gates-seperating groove heterostructure field-effect transistor (GSG HFET). The current turn-on/off is controlled by changing gate voltage to regulate the horizontal energy band between the double gates. A threshold voltage of 0.23 V and a high drain current density of 851 mA/mm are obtained in GSG HFET. Compared with the proposed depletion-mode device, the maximum drain current of the GSG HFET deceases slightly (about 7%). It is noteworthy that the threshold voltage is less sensitive to the etching time. The devices show high-uniformity threshold voltage of 0.23 V within wide etching time range from 5 to 9 min.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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