Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

Zhuangzhuang Hu; Hong Zhou; Kui Dang; Yuncong Cai; Zhaoqing Feng; Yangyang Gao; Qian Feng; Jincheng Zhang; Yue Hao

doi:10.1109/JEDS.2018.2853615

IEEE Journal of the Electron Devices Society (Jan 2018)

Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

Zhuangzhuang Hu,
Hong Zhou,
Kui Dang,
Yuncong Cai,
Zhaoqing Feng,
Yangyang Gao,
Qian Feng,
Jincheng Zhang,
Yue Hao

Affiliations

Zhuangzhuang Hu: Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China
Hong Zhou: ORCiD; Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China
Kui Dang: Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China
Yuncong Cai: ORCiD; Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China
Zhaoqing Feng: Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China
Yangyang Gao: Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China
Qian Feng: ORCiD; Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China
Jincheng Zhang: ORCiD; Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China
Yue Hao: Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China

DOI: https://doi.org/10.1109/JEDS.2018.2853615
Journal volume & issue: Vol. 6
pp. 815 – 820

Abstract

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In this paper, we report on achieving the first high performance lateral $\beta $ -Ga2O3 Schottky barrier diode (SBD) on sapphire substrate via transferring $\beta $ -Ga2O3 nano-membrane channel from a low dislocation density bulk $\beta $ -Ga2O3 substrate. Non field-plated lateral SBDs with Schottky–Ohmic contact distance of 4, 6, 11, and $15 \mu$ m demonstrate a reverse breakdown voltage (BV) of 0.64, 0.85, 1.2, and 1.7 kV with on resistance ( $R_\text {on}$ ) of 47, 66, 91, and 190 $\omega \cdot $ mm, respectively. This lateral $R_{\text {on}, \text{sp}}$ ~ BV performance is comparable to that of vertical SBDs. Combining with 107 ~ 108 high temperature current on/off ratio, $\beta $ -Ga2O3 SBD shows its great promise for power rectifying once the $\beta $ -Ga2O3 drift layer epitaxial growth becomes more mature.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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