Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

Abstract

We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectric-dielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.

Keywords

• Ferroelectric tunnel junction
• FTJ
• HZO
• synaptic memristor
• charge trapping
• interfacial charge