Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Chung-I. Yang; Ting-Chang Chang; Po-Yung Liao; Li-Hui Chen; Bo-Wei Chen; Wu-Ching Chou; Guan-Fu Chen; Sung-Chun Lin; Cheng-Yen Yeh; Cheng-Ming Tsai; Ming-Chang Yu; Shengdong Zhang

doi:10.1109/JEDS.2018.2837682

IEEE Journal of the Electron Devices Society (Jan 2018)

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Chung-I. Yang,
Ting-Chang Chang,
Po-Yung Liao,
Li-Hui Chen,
Bo-Wei Chen,
Wu-Ching Chou,
Guan-Fu Chen,
Sung-Chun Lin,
Cheng-Yen Yeh,
Cheng-Ming Tsai,
Ming-Chang Yu,
Shengdong Zhang

Affiliations

Chung-I. Yang: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
Ting-Chang Chang: ORCiD; Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
Po-Yung Liao: Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
Li-Hui Chen: Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan
Bo-Wei Chen: Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan
Wu-Ching Chou: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
Guan-Fu Chen: Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
Sung-Chun Lin: New Technology Development Department, HannStar Display Corporation, Tianan, Taiwan
Cheng-Yen Yeh: New Technology Development Department, HannStar Display Corporation, Tianan, Taiwan
Cheng-Ming Tsai: New Technology Development Department, HannStar Display Corporation, Tianan, Taiwan
Ming-Chang Yu: New Technology Development Department, HannStar Display Corporation, Tianan, Taiwan
Shengdong Zhang: ORCiD; School of Electronic and Computer Engineering, Peking University, Shenzhen, China

DOI: https://doi.org/10.1109/JEDS.2018.2837682
Journal volume & issue: Vol. 6
pp. 685 – 690

Abstract

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This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The Vth is found to shift negatively when increasing the ID-VG measurement condition VD from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length (Leff) being shorter than the mask channel length (L). Using the transmission line method to extract Leff, we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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