IEEE Journal of the Electron Devices Society (Jan 2019)

0.7-<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math></inline-formula>m InP DHBT Technology With 400-GHz <inline-formula> <tex-math notation="LaTeX">${f}_{{T}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${f}_{\text{MAX}}$ </tex-math></inline-formula> and 4.5-V BV<sub>CE0</sub> for High Speed and High Frequency Integrated Circuits

  • V. Nodjiadjim,
  • M. Riet,
  • C. Mismer,
  • R. Hersent,
  • F. Jorge,
  • A. Konczykowska,
  • J.-Y. Dupuy

DOI
https://doi.org/10.1109/JEDS.2019.2928271
Journal volume & issue
Vol. 7
pp. 748 – 752

Abstract

Read online

We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both fT and f MAX of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer. This technology is used for the fabrication of a very high speed 2:1 multiplexing selector operating up to 212-Gb/s, establishing a speed record. A 5.4-Vpp 100-Gb/s distributed differential selector-driver, as well as a 4.3-Vpp 64-GBd 8-pulse-amplitude-modulation (PAM) (192 Gb/s) high-speed power digital-to-analog converter (DAC) were also realized in this technology.

Keywords