Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor With Source/Drain Regions Doped by Al Reaction

Abstract

A self-aligned fabrication process for top-gate amorphous zinc-tin oxide (a-ZTO) thin-film transistors (TFTs) is developed, in which the source/drain (S/D) doping is realized through depositing a thin aluminum (Al) film on S/D regions and performing a thermal annealing. Results indicate that a chemical oxidation-reduction reaction between Al and a-ZTO films takes place during the thermal annealing process, and shallow donors of oxygen vacancies and metal tin (Sn) interstitials are thus generated. The formed S/D regions have a high carrier concentration over $1 \times 10 ^{20}$ cm $^{-3}$ , low sheet resistance of 0.57 k $ {\Omega }$ /sq, and high thermal stability even in oxygen ambient. The fabricated a-ZTO TFTs exhibit excellent electrical performances, including a low channel-width-normalized S/D resistance of about $7.05~ {\Omega }$ cm, a high field-effect mobility of 15.7 cm2/Vs, a high on/off current ratio of over $10 ^{8}$ , and near-zero turn-on voltage. Moreover, good electrical stability with less than 0.2-V threshold voltage shift under ±30-V gate bias stresses is also achieved.

Keywords

• Amorphous zinc-tin oxide
• self-aligned top-gate
• thin-film transistor
• Al reaction doping
• oxidation-reduction reaction