4H-SiC N-Channel JFET for Operation in High-Temperature Environments

Abstract

Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors (JFETs) are demonstrated to operate with well-behaved electrical characteristics at temperatures up to 600°C in air. Ti/Ni/TiW metal stacks are used to form ohmic contacts to n-type 4H-SiC with specific contact resistance of 1.14 × 10-3 Ω cm2 at 600°C. The on/off drain saturation current ratio and intrinsic gain at 600°C are 1.53 × 103 and 57.2, respectively. These results indicate that 4H-SiC JFETs can be used for extremely-high-temperature electronics applications.