Passivation of Poly-Si Thin Film Employing Si Self-Implantation and Its Application to TFTs

Abstract

Silicon self-implantation technique is applied to passivate the defects in the grain boundaries of the polycrystalline silicon (poly-Si) thin film. The implantation of Si with low dose is a precise technique of introducing Si interstitials in the poly-Si thin film. Thin film transistors fabricated on the resulting poly-Si thin film exhibit improved device characteristics. The increased field-effect mobility is attributed to the incorporation of the injected silicon interstitials in the grain boundaries of the poly-Si thin film and reduction of defect density.

Keywords

• Silicon self-implantation
• thin-film transistors (TFTs)
• polycrystalline silicon