Optimization of Photoelectron <italic>In-Situ</italic> Sensing Device in FD-SOI

Abstract

This article presents the optimization of a one-transistor active pixel sensor (1T-APS), known as the photoelectron in-situ sensing device (PISD) built in a fully-depleted silicon-on-insulator (FD-SOI) substrate. By employing TCAD simulation, we develop a physics-based model and systematically investigate the impact of six key parameters – gate oxide thickness, buried oxide layer, top Si layer, gate length, length of active region, and substrate doping – on the device’s sensitivity and sensing range. Our comprehensive study provides guidance on the design of the PISD with the highest performance.

Keywords

• 1T-APS
• FD-SOI
• PISD
• TCAD
• sensitivity
• sensing range