IEEE Journal of the Electron Devices Society (Jan 2019)

A New High-Gain Operational Amplifier Using Transconductance-Enhancement Topology Integrated With Metal Oxide TFTs

  • Zhuo-Jia Chen,
  • Wen-Xing Xu,
  • Jian-Dong Wu,
  • Lei Zhou,
  • Wei-Jing Wu,
  • Jian-Hua Zou,
  • Miao Xu,
  • Lei Wang,
  • Yu-Rong Liu,
  • Jun-Biao Peng

DOI
https://doi.org/10.1109/JEDS.2018.2883585
Journal volume & issue
Vol. 7
pp. 111 – 117

Abstract

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This paper presents an integrated operational amplifier (OPAMP) consisting of only n-type metal oxide thin-film transistors. In addition to using positive feedback in the input differential pair, a transconductance-enhancement topology is applied to improve the gain of the OPAMP. The OPAMP has a voltage gain (Av) of 29.54 dB over a 3-dB bandwidth of 9.33 kHz at a supply voltage of 15 V. The unity-gain frequency, phase margin (PM), and dc power consumption (PDC) are 180.2 kHz, 21.5° PM and 5.07 mW, respectively.

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